DMP58D1LVQ-7

$0.06

Description：MOSFET 2P-CH 50V 0.22A SOT563
Series：-

SKU:98ba05c1b464 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 50V 0.22A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：37pF @ 25V
Power - Max：490mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：Automotive
Qualification：AEC-Q101

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DMP58D1LVQ-7

Overview

The DMP58D1LVQ-7 is a dual P-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage of -50V and a continuous drain current of -220mA at +25°C. The maximum on-resistance is 8Ω at VGS = -5V. Gate-source voltage is rated at ±20V, with a threshold voltage ranging from -0.8V to -2.0V. Total gate charge is 0.6nC at VGS = -5V. Operating temperature spans -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive applications
Low on-resistance and low gate threshold voltage
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant

Applications

General purpose interfacing switches
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against the required reel quantity before procurement. Confirm that the component meets AEC-Q101 qualification requirements if used in automotive designs. Ensure the selected part number matches the exact package type and electrical specifications defined in the official datasheet.

Selection Notes

Select this component for compact dual-switching applications requiring automotive reliability. Evaluate thermal resistance values based on the specific PCB copper pad layout, as power dissipation varies significantly between minimum recommended pads and larger ground planes. Consider the low gate threshold voltage for compatibility with various logic levels.

Part Context

This device belongs to Diodes Incorporated's BSS family of dual MOSFETs. It utilizes silicon technology and is housed in a molded plastic SOT563 package. The product is manufactured in IATF 16949 certified facilities and supports PPAP documentation for automotive supply chain integration.

Replacement Considerations

Consult the manufacturer's official substitution guide for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers.