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Product Detailed Parameters
- Description：MOSFET P-CH 60V 7.7A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2569 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP6023LFG-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -60V and a continuous drain current of -7.7A at +25°C ambient temperature. The device exhibits a maximum on-resistance of 25mΩ at VGS = -10V and 33mΩ at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and utilizes the POWERDI3333-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Utilizes a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages, enabling higher density end products.
- Qualified to AEC-Q101 standards for high reliability automotive applications.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details. The DMP6023LFG-13 variant corresponds to the POWERDI3333-8 case in 3,000-unit tape and reel packaging. Confirm compliance with RoHS directives and halogen-free requirements as specified in the product summary notes before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance characteristics. Ensure the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance. Consider the thermal resistance values provided for both steady-state and transient conditions to properly size heat dissipation strategies for the intended application environment.
Part Context
This part belongs to the DMP6023 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered for miniaturization and efficiency in power management systems. The specific LFG suffix denotes the POWERDI3333-8 package configuration, distinguishing it from other variants in the family that may utilize different casing styles or packaging formats.
Replacement Considerations
DMP6023LE-13
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is rated at -55A, based on a 10µs pulse duration with a 1% duty cycle.
Does the device include an integrated body diode?
Yes, the datasheet specifies a Maximum Continuous Body Diode Forward Current (IS) of -2.2A and provides reverse recovery time and charge characteristics.
