DMP6023LFG-7

$0.38

Description：MOSFET P-CH 60V 7.7A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:817e557ca515 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 7.7A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2569 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP6023LFG-7

Overview

The DMP6023LFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI3333-8 package. It features a -60V drain-source voltage rating and a maximum continuous drain current of -7.7A at +25°C. The device offers a low on-state resistance of 25mΩ at VGS = -10V and 33mΩ at VGS = -4.5V. Key electrical parameters include a gate threshold voltage ranging from -1V to -3V, an input capacitance of 2569pF, and a total gate charge of 53.1nC at VGS = -10V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Utilizes a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMP6023LFG-7 as packaged in 2,000-unit tape and reel quantities. Confirm that the received component matches the exact part number and packaging specification required for your assembly process to ensure compatibility with automated placement equipment.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low on-resistance. Ensure the application voltage does not exceed the -60V drain-source breakdown limit. Consider the thermal characteristics and package size when designing PCB layouts, particularly if operating near the maximum rated currents or temperatures.

Part Context

This component belongs to the DMP series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed for high-density power management solutions where space constraints are critical. The POWERDI3333-8 package provides a balance between thermal performance and footprint reduction compared to traditional surface mount packages.

Replacement Considerations

Direct replacements must match the -60V rating, P-channel type, and POWERDI3333-8 package. Verify that any substitute maintains equivalent RDS(ON) values and gate charge specifications to ensure similar switching behavior and thermal performance in the target circuit.