DMP6023LFGQ-7

$0.79

Description：MOSFET P-CH 60V 7.7A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ab51c4141090 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 7.7A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2569 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP6023LFGQ-7

Overview

The DMP6023LFGQ-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage of -60V and a maximum continuous drain current of -7.7A at +25°C ambient temperature. The device exhibits a low on-resistance of 25mΩ at VGS = -10V and 33mΩ at VGS = -4.5V. Key electrical parameters include a gate threshold voltage of -1 to -3V, total gate charge of 53.1nC at VGS = -10V, and a maximum power dissipation of 1.0W on FR-4 with minimum pad layout. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state losses for improved efficiency.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
Totally lead-free & fully RoHS compliant, halogen and antimony free.

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against your bill of materials, as it dictates the packing quantity and carrier type. Confirm that the PowerDI3333-8 package dimensions align with your PCB footprint requirements. Ensure the component meets AEC-Q101 qualification standards if used in automotive applications requiring PPAP support.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the thermal resistance values based on your specific PCB copper area and layer configuration. Evaluate the gate charge and threshold voltage to ensure compatibility with your driving circuitry logic levels.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-grade discrete semiconductors. Manufactured in IATF 16949 certified facilities, it supports strict change control requirements typical of the automotive industry. The PowerDI series focuses on providing high-performance solutions in small footprints for modern electronic systems.