DMP6023LSS-13

$0.93

Description：MOSFET P-CH 60V 6.6A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d6dfa35a8ca2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 6.6A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2569 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP6023LSS-13

Overview

The DMP6023LSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of -60V and a continuous drain current (Id) of -6.6A at +25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 25mΩ at Vgs = -10V and 33mΩ at Vgs = -4.5V. Total gate charge (Qg) is 53.1nC at Vgs = -10V. Operating junction temperature range spans from -55°C to +150°C, with total power dissipation rated at 1.2W in standard applications.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed capabilities
Low threshold voltage and low gate drive requirements
Qualified to AEC-Q101 standards for automotive reliability

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the SO-8 package with tape and reel packaging containing 2,500 units per reel. Confirm compliance with RoHS directives and halogen-free status as specified in the manufacturer's documentation. Ensure thermal design accounts for the 100°C/W junction-to-ambient thermal resistance when mounted on FR-4 PCBs.

Selection Notes

Select this component for applications requiring a 60V P-channel MOSFET with optimized switching performance. Consider the -6.6A continuous current rating and 25mΩ on-resistance at -10V gate drive for efficient power switching. Evaluate thermal constraints based on the 1.2W power dissipation limit and ensure gate drive voltages align with the specified thresholds for optimal Rds(on).

Part Context

This part belongs to the DMP6023 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes an SO-8 surface-mount package designed for lead-free assembly. The product line targets high-efficiency power management solutions, emphasizing low conduction losses and robust switching characteristics suitable for modern electronic systems.

Replacement Considerations

Consult official datasheets for cross-reference compatibility. Verify pinout alignment, voltage ratings, and thermal characteristics before substitution.