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Product Detailed Parameters
- Description：MOSFET P-CH 60V 4.8A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1293 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP6050SFG-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -60V and a continuous drain current of -4.8A at +25°C. The device offers a maximum on-resistance of 50mΩ at VGS=-10V and 70mΩ at VGS=-4.5V. Total gate charge is 24nC at VGS=-10V. It operates within a temperature range of -55°C to +150°C and utilizes the POWERDI®3333-8 surface mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision DS37378 Rev. 1-2 matches procurement specifications. Ensure compliance with RoHS 2 and halogen-free requirements as defined by manufacturer standards. Validate ordering suffix -13 corresponds to 3000 units per reel in POWERDI®3333-8 packaging before finalizing acquisition.
Selection Notes
Select this component for designs requiring low RDS(ON) and compact footprint. Evaluate thermal resistance parameters against system heat dissipation capabilities. Consider gate threshold voltage characteristics relative to control logic levels. Assess transient thermal resistance curves for pulsed load conditions to ensure junction temperature limits are not exceeded during operation.
Part Context
This part belongs to the DMP6050 series of P-channel MOSFETs from Diodes Incorporated. It is specifically packaged in the POWERDI®3333-8 case style, which provides a lead-free, green molding compound solution. The series targets applications demanding high efficiency and small board area utilization compared to traditional SOIC packages.
Replacement Considerations
DMP6050SFG-7 serves as an alternative packaging variant containing 2000 units per tape and reel within the same POWERDI®3333-8 case.
FAQ
What is the maximum steady-state power dissipation?
The total power dissipation is 1.1W when mounted on an FR-4 PC board with minimum recommended pad layout, and 1.8W when mounted on a substrate with thermal bias to the bottom layer.
Does the device include an integrated body diode?
Yes, the MOSFET includes an intrinsic body diode with a maximum continuous forward current rating of -2.8A and a reverse recovery time of 13.6ns under specified test conditions.
