DMP6051SFVW-13

DMP6051SFVW-13

$0.16
  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:c7007fcbfcd1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:18.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2087 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.7W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI3333-8 (SWP) Type UX
  • Package / Case:8-PowerVDFN

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DMP6051SFVW-13

Overview

The DMP6051SFVW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (VDSS) of -60V and a continuous drain current (ID) of -18.8A at TC = +25°C. The maximum on-state resistance (RDS(ON)) is 60mΩ at VGS = -10V and 80mΩ at VGS = -4.5V. Total gate charge (Qg) is 36nC at VGS = -10V. The device supports an operating temperature range of -55°C to +150°C.

Feature Summary

  • Designed for high-efficiency power-management applications with minimized on-state resistance.
  • Features wettable flanks to facilitate improved optical inspection during manufacturing.
  • Manufactured as a totally lead-free and fully RoHS compliant component.
  • Verified through 100% Unclamped Inductive Switch (UIS) testing in production.

Applications

  • Motor controls
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel carrier configuration. Confirm that the 'SWP (Type UX)' package variant matches the required footprint for the target PCB layout. Ensure compliance with J-STD-020 Level 1 moisture sensitivity ratings for storage and handling procedures.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 60V P-channel switching. Evaluate thermal performance based on the specified junction-to-case thermal resistance of 2.9°C/W. Consider the gate threshold voltage characteristics relative to the available drive voltage levels in the control circuitry.

Part Context

This part belongs to the DMP6051SFVW series of P-channel MOSFETs. It utilizes the PowerDI3333-8/SWP (Type UX) package, which provides a compact form factor suitable for space-constrained designs. The series is engineered to balance low conduction losses with robust switching capabilities.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent part numbers. Cross-referencing requires matching VDSS, ID, RDS(ON), and package dimensions precisely.

FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current (IDM) is rated at -75A, defined by a 10µs pulse duration with a 1% duty cycle.

Does the device support avalanche energy conditions?

Yes, the datasheet specifies an avalanche energy (EAS) rating of 36mJ for an inductance (L) of 0.1mH.

DMP6051SFVW-13DMP6051SFVW-13
$0.16
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