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The DMP6051SFVW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (VDSS) of -60V and a continuous drain current (ID) of -18.8A at TC = +25°C. The maximum on-state resistance (RDS(ON)) is 60mΩ at VGS = -10V and 80mΩ at VGS = -4.5V. Total gate charge (Qg) is 36nC at VGS = -10V. The device supports an operating temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel carrier configuration. Confirm that the 'SWP (Type UX)' package variant matches the required footprint for the target PCB layout. Ensure compliance with J-STD-020 Level 1 moisture sensitivity ratings for storage and handling procedures.
Select this component when a low-profile surface-mount solution is required for 60V P-channel switching. Evaluate thermal performance based on the specified junction-to-case thermal resistance of 2.9°C/W. Consider the gate threshold voltage characteristics relative to the available drive voltage levels in the control circuitry.
This part belongs to the DMP6051SFVW series of P-channel MOSFETs. It utilizes the PowerDI3333-8/SWP (Type UX) package, which provides a compact form factor suitable for space-constrained designs. The series is engineered to balance low conduction losses with robust switching capabilities.
Consult official manufacturer documentation for verified equivalent part numbers. Cross-referencing requires matching VDSS, ID, RDS(ON), and package dimensions precisely.
The maximum pulsed drain current (IDM) is rated at -75A, defined by a 10µs pulse duration with a 1% duty cycle.
Yes, the datasheet specifies an avalanche energy (EAS) rating of 36mJ for an inductance (L) of 0.1mH.