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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 3.3A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.3A
- Rds On (Max) @ Id, Vgs：105mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：969pF @ 30V
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMP6110SSD-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 105mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. Continuous drain current ratings are -3.3A at TA = +25°C and -7.8A at TC = +25°C. Packaged in an SO-8 case, it includes two independent channels with low input capacitance and fast switching speed.
Feature Summary
- Dual channel configuration for efficient power management
- Low on-state resistance for high efficiency
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the SO-8 package dimensions align with the target PCB footprint. Ensure compliance with RoHS and halogen-free requirements if mandated by the end product specifications. Check for any recent revisions to the datasheet regarding thermal or electrical characteristics.
Selection Notes
Select this component when a dual P-channel solution is required for space-constrained designs. Evaluate the thermal resistance values against the expected power dissipation in the application environment. Consider the gate threshold voltage compatibility with the driving logic levels to ensure reliable switching performance under varying load conditions.
Part Context
This part belongs to the DMP6110 series of P-channel MOSFETs from Diodes Incorporated. It is designed as a new product offering optimized on-resistance while maintaining superior switching performance. The series targets high-efficiency power management applications requiring compact surface-mount solutions.
Replacement Considerations
Check for equivalent dual P-channel MOSFETs with similar -60V ratings and SO-8 packaging. Verify pinout compatibility and thermal characteristics before substitution. Ensure the alternative device meets the same AEC-Q101 qualification standards if used in automotive contexts.
