DMP6111SVT-13

$0.13

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d59a9f3cfd7b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：115mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1283 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP6111SVT-13

Overview

The DMP6111SVT-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, packaged in TSOT26. It features a -60V drain-source voltage rating and low on-state resistance of 115mΩ at VGS = -10V and 145mΩ at VGS = -4.5V. The device supports continuous drain currents up to -2.7A at +25°C and offers fast switching speeds with low input capacitance. It includes 100% UIS testing and complies with RoHS standards.

Feature Summary

Designed for high-efficiency power management applications
Features low on-resistance and fast switching speed
Qualified to JEDEC standards for high reliability
Totally lead-free and fully RoHS compliant

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the component meets the required environmental specifications, including halogen and antimony-free status. Ensure compatibility with the TSOT26 package dimensions and soldering requirements specified in the datasheet.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with optimized on-resistance. Consider the thermal characteristics and safe operating area when determining heat dissipation needs. Evaluate gate threshold voltage requirements against the available drive voltages in the target circuit design.

Part Context

This part belongs to the DMP6111 series of P-channel MOSFETs manufactured by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The product line is designed to support various power management applications efficiently.

Replacement Considerations

An automotive-compliant version is available under the separate part number DMP6111SVTQ. Verify if the standard or automotive grade is required based on the application environment and reliability standards.