DMP6111SVT-7

$0.15

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e876e75b9354 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：115mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1283 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP6111SVT-7

Overview

The DMP6111SVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of -60V and a maximum continuous drain current of -2.7A at +25°C. The device offers a typical on-resistance of 87mΩ at VGS = -10V and 112mΩ at VGS = -4.5V. Total gate charge is 23.2nC at VGS = -10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance.
Features fast switching speed and low input capacitance.
Qualified to JEDEC standards for high reliability.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of intentionally added lead, halogens, and antimony as defined by the manufacturer's green product definitions.

Selection Notes

Select this component when a single P-channel MOSFET in a TSOT26 package is required for compact designs. Ensure the application operates within the specified -60V drain-source voltage limit and requires a continuous current capability of up to -2.7A at ambient temperatures of +25°C. Consider thermal derating for operation above +25°C or in confined spaces.

Part Context

This part belongs to the DMP6111SVT series of P-channel enhancement mode MOSFETs. It is distinct from the dual-channel variant DMP6110SVT-13. An automotive-compliant version, DMP6111SVTQ, is available under a separate datasheet for applications requiring specific automotive qualification standards beyond standard industrial reliability.

Replacement Considerations

DMP6110SVT-13 is a related dual-channel variant but differs in channel count and current rating.

FAQ

Is the DMP6111SVT-7 suitable for automotive applications?

The standard DMP6111SVT-7 is qualified to JEDEC standards for high reliability. For specific automotive requirements, an automotive-compliant part (DMP6111SVTQ) is available under a separate datasheet.