DMP6111SVTQ-7

$0.20

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4140ccd455c9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：115mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1283 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Download product information

DMP6111SVTQ-7

Overview

The DMP6111SVTQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -2.7A at +25°C. The device exhibits a low on-resistance of 115mΩ at VGS = -10V and 145mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C and is housed in a TSOT26 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP support for automotive use
Manufactured in IATF 16949 certified facilities
Includes 100% Unclamped Inductive Switch (UIS) testing in production

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix, such as -7 or -13, to confirm the required tape and reel packing quantity. Confirm that the component meets the necessary automotive qualification standards and RoHS compliance requirements for your specific design implementation.

Selection Notes

Select this component when an automotive-grade P-channel MOSFET is required. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to Diodes Incorporated's automotive MOSFET portfolio. It is specifically engineered to meet stringent automotive reliability standards. The device utilizes silicon technology and is packaged in a TSOT26 form factor suitable for surface mount applications.