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The DMP6180SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of -60V and a continuous drain current (I_D) of -14A at +25°C case temperature. The device offers a maximum on-resistance (R_DS(ON)) of 110mΩ at V_GS = -10V and 140mΩ at V_GS = -4.5V. It utilizes a TO-252 (DPAK) package with a thermal resistance from junction to case (R_θJC) of 3.1°C/W. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the standard commercial version matches the required application environment, as an automotive-compliant variant (DMP6180SK3Q) exists under a separate datasheet. Ensure procurement channels are authorized to maintain warranty validity.
Select this component when a -60V P-channel MOSFET is required in a TO-252 package. Evaluate the R_DS(ON) specifications against the target gate drive voltage (-10V or -4.5V) to ensure acceptable conduction losses. Verify that the thermal design accommodates the specified junction-to-case thermal resistance for the intended load conditions.
This part belongs to the DMP6180SK3 series of P-channel enhancement mode MOSFETs. It is distinct from the automotive-grade DMP6180SK3Q, which follows different qualification standards. The device is designed to balance low on-resistance with fast switching characteristics for modern power management circuits.
The automotive-compliant alternative is the DMP6180SK3Q. Verify if the application requires AEC-Q101 compliance before substituting. Other generic replacements require matching the -60V rating, TO-252 package, and comparable R_DS(ON) values.
Yes, an automotive-compliant part is available under the part number DMP6180SK3Q, which is documented under a separate datasheet.
The maximum body diode forward current (IS) is rated at -4.1A.