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Product Detailed Parameters
- Description：MOSFET P-CH 60V 9.4A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：708 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMP6185SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -60V and a continuous drain current (I_D) of -9.4A at case temperature +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 150mΩ at V_GS = -10V and 185mΩ at V_GS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO252 (DPAK) package.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability applications
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
- Designed to minimize on-state resistance while maintaining superior switching performance
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental specifications, including compliance with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2). Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component for designs requiring a -60V P-channel MOSFET with low on-resistance characteristics suitable for power management. Consider the thermal resistance values and power dissipation limits when designing heat sinks or PCB layouts. Verify gate drive voltage compatibility, as R_DS(ON) varies significantly between -4.5V and -10V gate-source voltages.
Part Context
This part belongs to the DMP6185 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a TO252 (DPAK) case made of molded plastic with a matte tin finish over a copper leadframe. The device is designed for surface mount installation and offers robust performance in high-efficiency power applications.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with similar -60V ratings and comparable R_DS(ON) values. Ensure pinout compatibility with the TO252 (DPAK) package. Verify that any substitute component also meets AEC-Q101 qualification if automotive reliability is required.
