DMP6250SFDF-7

$0.23

Description：MOSFET BVDSS: 41V-60V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:cb757b0d63ca Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V-60V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：155mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：612 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP6250SFDF-7

Overview

The DMP6250SFDF is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -60V drain-source breakdown voltage and low on-state resistance of 155mΩ at VGS=-10V and 240mΩ at VGS=-4.5V. The device supports a continuous drain current of -3.2A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a U-DFN2020-6 (Type F) case, it offers fast switching speeds and low input capacitance.

Feature Summary

Low on-resistance with superior switching performance
Low gate threshold voltage for efficient drive
Low input/output leakage currents
Totally lead-free and fully RoHS compliant

Applications

Battery management systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free requirements. Ensure the package type matches the intended PCB layout dimensions and thermal dissipation needs for the application.

Selection Notes

Select this component when a compact P-channel MOSFET with low RDS(ON) is required for space-constrained designs. Consider the U-DFN2020-6 package for its small footprint and thermal characteristics. Evaluate the gate charge and threshold voltage against the driving circuit capabilities to ensure optimal switching efficiency and minimal conduction losses.

Part Context

This part belongs to Diodes Incorporated's portfolio of P-channel enhancement mode MOSFETs. These devices are engineered to minimize on-state resistance while maintaining fast switching speeds. The product line targets applications requiring high efficiency and compact form factors in modern electronic systems.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with Q-suffixes. Verify pinout compatibility and electrical parameters before substituting with other P-channel MOSFETs from different manufacturers.