DMP6350S-13

$0.54

Description：MOSFET P-CH 60V 1.5A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:25c8ebe0a3a8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 1.5A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：350mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：206 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP6350S-13

Overview

The DMP6350S-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage rating and a maximum continuous drain current of -1.5A at +25°C. The device exhibits a low on-state resistance of 350mΩ at VGS = -10V and 550mΩ at VGS = -4.5V. Packaged in an SOT-23 surface-mount case, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Battery charging circuits
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable environmental directives and quality standards relevant to the target application before finalizing procurement specifications.

Selection Notes

Select this component when a compact single-channel P-channel MOSFET with automotive-grade qualification is required. Ensure the gate drive voltage supports the specified RDS(ON) thresholds and verify thermal dissipation capabilities against the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a standard SOT-23 package designed for surface-mount assembly. The device is engineered to minimize on-state resistance while maintaining superior switching performance for efficient power management.