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Product Detailed Parameters
- Description：MOSFET P-CH 60V 1.5A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：350mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：206 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：720mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP6350SQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications and qualified to AEC-Q101 standards. It features a -60V drain-source voltage (BVDSS) and a maximum continuous drain current of -1.5A at +25°C ambient temperature. The device offers a low on-resistance (RDS(ON)) of 350mΩ at VGS = -10V and 550mΩ at VGS = -4.5V. Packaged in an SOT23 case, it supports a power dissipation of 0.72W with a thermal resistance (RθJA) of 176°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability in automotive environments
- Low on-resistance and input capacitance for efficient switching performance
- Fast switching speed combined with low input/output leakage currents
- Totally lead-free and fully RoHS compliant with halogen and antimony-free construction
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. The -13 suffix indicates a tape and reel configuration containing 10,000 units per reel. Confirm that the component meets all necessary automotive qualification requirements, including PPAP capability, before finalizing procurement decisions for production integration.
Selection Notes
Select this component when a P-channel MOSFET with a -60V rating and compact SOT23 footprint is required. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds at -10V or -4.5V. Consider the thermal constraints provided by the 176°C/W junction-to-ambient resistance for steady-state operation on standard FR-4 substrates.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series includes various voltage and current ratings tailored for different power management needs. The DMP6350SQ specifically targets automotive-grade reliability while maintaining small form factor requirements through its SOT23 package design.
Replacement Considerations
Check datasheets for alternative parts offering similar -60V BVDSS and comparable RDS(ON) values within an SOT23 package. Verify pinout compatibility and ensure replacement components meet the same AEC-Q101 qualification standards if used in automotive contexts.
FAQ
What is the maximum pulsed drain current for the DMP6350SQ?
The maximum pulsed drain current (IDM) is rated at -6A, based on a 10µs pulse duration with a 1% duty cycle.
Is the DMP6350SQ suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive use cases such as backlighting and DC-DC converters.
