ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 501V~650V SO-8 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Download product information
Overview
The DMP65H20D0HSS is a 600V P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage (BVDSS) of -650V and a static drain-source on-resistance (RDS(ON)) of 20Ω at VGS = -10V. The device supports a continuous drain current of -0.2A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in an SO-8 case, it offers low input capacitance and fast switching characteristics.
Feature Summary
- Low on-state resistance combined with superior switching performance
- High breakdown voltage rating suitable for demanding power applications
- Totally lead-free and fully RoHS compliant construction
Applications
- Motor Control
- Backlighting
- AC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 4,000 units per reel. Confirm that the component meets the required environmental standards, specifically ensuring compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the supplier provides documentation confirming the halogen and antimony-free 'Green' status as defined by Diodes Incorporated.
Selection Notes
Select this component when designing circuits requiring a P-channel MOSFET capable of handling high voltages up to 600V. The device is appropriate for applications where minimizing on-state resistance is critical for efficiency. Consider the thermal resistance parameters and the operating temperature range to ensure adequate heat dissipation. Verify that the gate threshold voltage aligns with the control logic levels available in the system design.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered to provide a balance between low on-resistance and fast switching speeds. The series utilizes advanced silicon technology to achieve high reliability and performance in compact surface-mount packages suitable for automated assembly processes.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility based solely on package type or general electrical ratings without reviewing the complete datasheet specifications.
FAQ
What is the maximum body diode forward current?
The maximum body diode forward current is -0.2A at an ambient temperature of +25°C and decreases to -0.16A at +70°C.
Is this component suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/200, PPAP capability, and manufacturing in IATF 16949 certified facilities, you must contact Diodes Incorporated or your local representative.
