DMP65H9D0HSS-13

$1.67

Description：MOSFET BVDSS: 501V~650V SO-8 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a641bd7b4a3e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 501V~650V SO-8 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP65H9D0HSS-13

Overview

The DMP65H9D0HSS is a 600V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -600V and a continuous drain current of -0.3A at +25°C. The device exhibits a static drain-source on-resistance of up to 9Ω at VGS = -10V. Packaged in an SO-8 (Standard B) case, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Totally lead-free and fully RoHS compliant, with halogen and antimony-free green device construction.

Applications

Motor Control
Backlighting
AC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 4,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable regulatory standards required for your target market before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high-voltage P-channel switching capabilities. Ensure the thermal design accommodates the specified junction-to-ambient thermal resistance values under expected operating conditions.

Part Context

This part belongs to Diodes Incorporated's advanced information MOSFET portfolio. It utilizes a molded plastic SO-8 case material classified as UL 94V-0 flammability rated. The terminals are finished with matte tin annealed over a copper leadframe.