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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V X2-DFN100
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：192mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 5V
- Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMP68D0LFB-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -65V drain-source voltage rating and an X1-DFN1006-3 surface-mount package. The device exhibits a maximum on-resistance of 8Ω at VGS = -5V and 18Ω at VGS = -2.5V, with a continuous drain current of -318mA at +25°C. Key electrical parameters include a gate threshold voltage range of -0.8V to -2.1V, total gate charge of 4.1nC, and input capacitance of 36pF. Thermal characteristics specify a power dissipation of 0.5W (standard) or 1.21W (with thermal vias), operating within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input/output leakage
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device
Applications
- DC-DC converters
- Power management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details and tape-and-reel quantities. Ensure compliance requirements match project specifications, as the component is certified under EU RoHS directives and defined as halogen- and antimony-free. Confirm that the X1-DFN1006-3 package dimensions align with the target PCB footprint and soldering process capabilities.
Selection Notes
Select this component for applications requiring a compact P-channel switch with moderate voltage handling up to -65V. The low gate threshold voltage allows compatibility with various logic levels, while the small X1-DFN1006-3 package supports space-constrained designs. Evaluate thermal performance based on the required copper area and via configuration, as power dissipation ratings vary significantly between standard and thermally enhanced mounting conditions.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in the X1-DFN1006-3 case style. The product line emphasizes minimized on-state resistance combined with superior switching performance, targeting modern power management solutions where size and efficiency are critical design constraints.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pinouts, voltage ratings, and package dimensions when evaluating potential replacements.
