SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMP68D1L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -206mA at +25°C ambient temperature. The device offers a typical on-resistance of 7.5Ω at VGS = -10V and 8.0Ω at VGS = -5V. Total power dissipation is rated at 0.5W, with a thermal resistance junction-to-ambient of 263°C/W. Operating and storage temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2 and RoHS 3 directives as well as halogen-free requirements. Ensure the selected part aligns with the standard SOT23 package dimensions provided in the mechanical data section.
Select this component when a P-channel MOSFET with a -60V rating is required for low-current switching tasks. Evaluate the 7.5Ω on-resistance against circuit efficiency needs. Consider the 0.5W power dissipation limit and 263°C/W thermal resistance for adequate heat management within the target application environment.
This component belongs to the DMP series of surface-mount P-channel MOSFETs produced by Diodes Incorporated. It utilizes a molded plastic SOT23 package designed for automated surface mount assembly. The product line emphasizes green manufacturing processes, ensuring compliance with environmental regulations regarding lead, halogens, and antimony content.
An automotive-compliant version of this component is available under the separate datasheet designation DMP68D1LQ.
The gate threshold voltage ranges from -0.8V to -2.1V when measured at a drain-source current of -250μA.
The static drain-source on-resistance is typically 7.5Ω at a gate-source voltage of -10V and increases to 8.0Ω at a gate-source voltage of -5V.