DMP68D1L-13

DMP68D1L-13

$0.05
  • Description:2N7002 FAMILY SOT23 T&R 10K
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:a757ef9a2886 Category: Brand:

  
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Product Detailed Parameters

  • Description:2N7002 FAMILY SOT23 T&R 10K
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:206mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:42 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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DMP68D1L-13

Overview

The DMP68D1L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -206mA at +25°C ambient temperature. The device offers a typical on-resistance of 7.5Ω at VGS = -10V and 8.0Ω at VGS = -5V. Total power dissipation is rated at 0.5W, with a thermal resistance junction-to-ambient of 263°C/W. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

  • Designed for high-efficiency power-management applications with minimized on-state resistance.
  • Provides superior switching performance combined with low input capacitance.
  • Includes built-in ESD protection mechanisms.
  • Compliant with JEDEC standards for high reliability.

Applications

  • Motor controls
  • Power-management functions
  • Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2 and RoHS 3 directives as well as halogen-free requirements. Ensure the selected part aligns with the standard SOT23 package dimensions provided in the mechanical data section.

Selection Notes

Select this component when a P-channel MOSFET with a -60V rating is required for low-current switching tasks. Evaluate the 7.5Ω on-resistance against circuit efficiency needs. Consider the 0.5W power dissipation limit and 263°C/W thermal resistance for adequate heat management within the target application environment.

Part Context

This component belongs to the DMP series of surface-mount P-channel MOSFETs produced by Diodes Incorporated. It utilizes a molded plastic SOT23 package designed for automated surface mount assembly. The product line emphasizes green manufacturing processes, ensuring compliance with environmental regulations regarding lead, halogens, and antimony content.

Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet designation DMP68D1LQ.

FAQ

What is the gate threshold voltage range?

The gate threshold voltage ranges from -0.8V to -2.1V when measured at a drain-source current of -250μA.

How does the on-resistance vary with gate voltage?

The static drain-source on-resistance is typically 7.5Ω at a gate-source voltage of -10V and increases to 8.0Ω at a gate-source voltage of -5V.

DMP68D1L-13DMP68D1L-13
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