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The DMP68D1LQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of -60V and a maximum continuous drain current (ID) of -206mA at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 7.5Ω max at VGS = -10V and 8.0Ω max at VGS = -5V, both tested at ID = -100mA. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix required for your production volume. The DMP68D1LQ-7 variant is supplied in tape and reel packaging containing 3,000 units per carrier. Confirm that the selected package type matches your board layout requirements before finalizing procurement orders.
Select this component when a -60V P-channel MOSFET is required for low-current switching tasks. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Verify thermal management capabilities against the specified junction-to-ambient thermal resistance values under steady-state conditions.
This part belongs to the Diodes Incorporated DMP series of surface-mount power field-effect transistors. It utilizes an SOT23 package molded in plastic compound. The device is manufactured in IATF 16949 certified facilities to support stringent automotive quality control requirements.
Consult official cross-reference lists for verified substitutes. No alternative part numbers are explicitly confirmed in the provided documentation.