DMP68D1LV-13

DMP68D1LV-13

$0.06
  • Description:MOSFET 2P-CH 60V 0.238A SOT563
  • Series:-

SKU:eb80dd527f91 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 60V 0.238A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:238mA (Ta)
  • Rds On (Max) @ Id, Vgs:8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:42pF @ 30V
  • Power - Max:500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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DMP68D1LV-13

Overview

The DMP68D1LV-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 package. It features a drain-source voltage (BVDSS) of -60V and a maximum continuous drain current (ID) of -238mA at +25°C. The static drain-source on-resistance (RDS(ON)) is typically 2.0Ω with a maximum of 8Ω at VGS = -5V. Total power dissipation is rated at 0.5W, with a junction-to-ambient thermal resistance of 258°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Dual configuration integrating two independent P-channel enhancement mode MOSFETs within a single compact SOT563 surface-mount package.
  • Optimized for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
  • Includes integrated electrostatic discharge (ESD) protection mechanisms to enhance device reliability during handling and operation.

Applications

  • DC-DC converters
  • Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the SOT563 package dimensions align with the target PCB footprint. Ensure compliance with RoHS 3 and halogen-free requirements if mandated by the end-product specifications.

Selection Notes

Select this component when space-constrained designs require dual P-channel switching capabilities. Evaluate the 8Ω maximum RDS(ON) against load current requirements to ensure acceptable conduction losses. Consider the 0.5W power dissipation limit and thermal resistance characteristics for adequate heat management under steady-state conditions.

Part Context

This part belongs to the DMP68D1LV series of dual P-channel MOSFETs designed for low-voltage power switching. It utilizes silicon technology and is housed in a molded plastic SOT563 package with matte tin annealed terminals over a copper leadframe. The device is fully lead-free and compliant with JEDEC standards for high reliability.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, consult the related Q-suffix parts listed on the manufacturer's website. Verify pinout compatibility and electrical parameters before substituting with other dual P-channel MOSFETs in the SOT563 package.

FAQ

What is the maximum continuous drain current rating for the DMP68D1LV?

The maximum continuous drain current is -238 mA at an ambient temperature of +25°C and -190 mA at +70°C.

Does the DMP68D1LV include ESD protection?

Yes, the datasheet explicitly lists ESD protection as one of the key features of the device.

What is the gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±20 V.

DMP68D1LV-13DMP68D1LV-13
$0.06
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