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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 0.238A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：238mA (Ta)
- Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 30V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMP68D1LV-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent channels within an SOT563 package. The device features a drain-source voltage (BVDSS) of -60V and a maximum continuous drain current (ID) of -238mA at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 8Ω maximum at VGS = -5V and ID = -100mA. Total power dissipation reaches 0.5W on FR-4 substrate, with a junction-to-ambient thermal resistance of 258°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual channel integration for space-efficient circuit design
- Optimized low on-state resistance for high-efficiency power management
- Fast switching speed combined with low input capacitance
- ESD protected structure with low input/output leakage currents
Applications
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications. Ensure the selected variant matches the intended tape and reel requirements for automated assembly processes.
Selection Notes
Evaluate the RDS(ON) specification relative to the target load current to ensure acceptable conduction losses. Verify that the gate threshold voltage aligns with the available drive signal levels in the application circuit. Consider the thermal resistance characteristics when designing the PCB copper area to maintain safe operating temperatures under steady-state conditions.
Part Context
This component belongs to the DMP68D1LV series of dual P-channel MOSFETs. It utilizes a molded plastic SOT563 package designed for surface-mount technology. The device is constructed using silicon technology and is compliant with JEDEC standards for high reliability. It serves as a compact solution for managing power distribution in portable and industrial electronics.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with Q-suffixes listed on the manufacturer's website. Direct pin-compatible replacements should be verified against electrical parameters including BVDSS, ID, and RDS(ON).
FAQ
What is the maximum continuous drain current for this device?
The maximum continuous drain current is -238mA at an ambient temperature of +25°C.
Does this component include internal ESD protection?
Yes, the datasheet specifies that the device is ESD protected.
What is the thermal resistance from junction to ambient?
The thermal resistance (RθJA) is 258°C/W when mounted on an FR-4 substrate with minimum recommended pad layout.
