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Product Detailed Parameters
- Description：MOSFET P-CH 12V 80A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：124 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：6334 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：3.2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMPH1006UPS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (BVDSS) of -12V and a maximum continuous drain current (ID) of -80A at TC = +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 6mΩ at VGS = -4.5V and 8mΩ at VGS = -2.5V. Rated for operation up to +175°C junction temperature, it supports high-efficiency power management with fast switching speeds and 100% unclamped inductive switching capability.
Feature Summary
- Rated for +175°C operation suitable for high ambient temperature environments
- Ensures reliable end applications through 100% unclamped inductive switching testing
- Minimizes on-state losses via low RDS(ON) while maintaining fast switching speed
- Qualified to AEC-Q101 standards for automotive-grade high reliability
Applications
- Notebook battery power management
- DC-DC converters
- Load switch circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the standard commercial version meets all functional requirements before considering the separate automotive-compliant variant (DMPH1006UPSQ). Ensure design parameters align with the specified thermal characteristics and maximum ratings provided in the official datasheet.
Selection Notes
Select this component for designs requiring robust P-channel switching with high current handling capabilities in compact form factors. The PowerDI5060-8 package provides efficient thermal dissipation for high-power density applications. Consider the -12V rating and low gate threshold voltage when designing control logic interfaces. Verify compatibility with the intended operating temperature range and ensure adequate PCB layout for the exposed drain pad thermal path.
Part Context
This part belongs to Diodes Incorporated's portfolio of high-reliability power MOSFETs designed for demanding power management tasks. The DMPH1006 series utilizes advanced silicon technology to achieve superior performance metrics compared to previous generations. It is engineered specifically for portable electronics and automotive systems where space constraints and thermal efficiency are critical design drivers.
Replacement Considerations
An automotive-compliant alternative is available under the part number DMPH1006UPSQ. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure any replacement maintains the required AEC-Q101 qualification if used in automotive contexts.
