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Product Detailed Parameters
- Description：MOSFET P-CH 30V 60A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：139 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6807 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMPH3010LPS-13 is a P-channel enhancement mode MOSFET rated for -30V drain-source voltage and up to -60A continuous drain current at +25°C case temperature. It features a maximum on-resistance of 7.5mΩ at VGS=-10V and 10mΩ at VGS=-4.5V. The device operates within a junction temperature range of -55°C to +175°C, with a thermal resistance from junction to case of 0.9°C/W. Packaged in a POWERDI®5060-8 surface-mount housing, it supports high-efficiency power management applications.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- DC-DC converters
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified -55°C to +175°C operating temperature range to maintain performance integrity.
Selection Notes
Select this component when low on-state resistance and fast switching speeds are required for high ambient temperature environments. The POWERDI®5060-8 package provides efficient thermal dissipation suitable for compact designs. Verify that gate drive voltages align with the specified thresholds for optimal RDS(ON) performance and switching characteristics.
Part Context
This part belongs to Diodes Incorporated's new generation of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions where thermal stability and reliability under harsh conditions are critical design parameters.
Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
