DMPH4009SPSW-13

$0.36

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:be347a2dac97 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：83.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4.6W (Ta), 143W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMPH4009SPSW-13

Overview

The DMPH4009SPSW is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 11mΩ at VGS = -10V and 19mΩ at VGS = -4.5V, supporting continuous drain currents of -83.4A at +25°C and -59A at +100°C. The device utilizes a PowerDI5060-8 package with wettable flanks.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flank technology to improve optical inspection reliability
Includes 100% unclamped inductive switching (UIS) testing during production

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and Halogen/Antimony-free requirements as defined by the manufacturer's green product standards before finalizing procurement specifications.

Selection Notes

Select this component when low on-state resistance and fast switching speed are required for high-efficiency power management. Ensure the application environment supports the specified thermal characteristics and that the gate drive voltage aligns with the threshold requirements for optimal conduction performance.

Part Context

This part belongs to Diodes Incorporated's new generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It is housed in a PowerDI5060-8/SWP package utilizing molded plastic with a UL 94V-0 flammability rating and matte tin annealed terminals over a copper leadframe.