ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.8W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Download product information
Overview
The DMPH4009SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and operates within a temperature range of -55°C to +175°C. The device offers a maximum on-resistance of 11mΩ at VGS = -10V and 19mΩ at VGS = -4.5V, supporting continuous drain currents of -11A and -8.5A respectively. Packaged in an SO-8 format with a tape and reel quantity of 2,500 units, it includes a total gate charge of 112nC at VGS = -10V.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Low on-state resistance for high efficiency
- Low input capacitance for superior switching performance
- 100% unclamped inductive switch (UIS) tested
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required 2,500-unit tape and reel packaging configuration. Confirm that the SO-8 package dimensions align with your PCB footprint requirements. Ensure the component meets RoHS compliance standards if applicable to your manufacturing process. Validate thermal management capabilities against your system's ambient temperature constraints.
Selection Notes
Select this component when a low-voltage P-channel MOSFET with high current handling is required. The -40V rating suits applications where higher voltage ratings are unnecessary. Consider the 11mΩ on-resistance for minimizing conduction losses. Verify that the SO-8 package fits within the available board space constraints.
Part Context
This part belongs to the DMPH series of power MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching speeds. The DMPH4009SSS variant specifically targets the 40V voltage class with optimized thermal characteristics for compact designs.
Replacement Considerations
Consult official Diodes documentation for verified substitute part numbers. Cross-referencing requires matching voltage, current, and package specifications.
