DMPH4011SK3-13

$0.43

Description：MOSFET BVDSS: 31V~40V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:55312bf17bed Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：104 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4497 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 115W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

DMPH4011SK3-13

Overview

The DMPH4011SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and a maximum continuous drain current of -79A at +25°C case temperature. The device exhibits a low on-resistance of 11mΩ at VGS=-10V and 19mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 3.7W at +25°C ambient. The component utilizes a TO252 (DPAK) surface-mount package.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Lead-free finish and RoHS compliant construction

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific part number against official manufacturer documentation before procurement. Confirm that the required automotive grade suffix (Q-suffix) is selected if AEC-Q100/101 qualification or PPAP capability is necessary for the intended application. Ensure the ordering information matches the desired packaging format.

Selection Notes

Select this component for high-efficiency power management applications requiring superior switching performance and minimized on-state resistance. Consider the thermal characteristics and the requirement for a heat sink when operating near the maximum power dissipation limits. Verify compatibility with the gate drive voltage levels to ensure optimal RDS(ON) performance.

Part Context

This component belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. It is designed as a new generation product to minimize on-state resistance while maintaining fast switching speeds. The device is suitable for environments with high ambient temperatures due to its extended thermal rating.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Consult the manufacturer's automotive products listing for qualified alternatives.

FAQ

Is the DMPH4011SK3-13 qualified for automotive applications?

The standard DMPH4011SK3-13 is not explicitly designated as an automotive-grade part. For automotive applications requiring AEC-Q100/101 qualification and PPAP capability, customers should refer to the related automotive grade parts with the Q-suffix.