DMPH4013SPSW-13

$0.45

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:77a759852701 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4763 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMPH4013SPSW-13

Overview

The DMPH4013SPSW is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage and operating up to +175°C junction temperature. It features a maximum on-resistance of 13mΩ at VGS=-10V and 23mΩ at VGS=-4.5V, supporting continuous drain currents of -69A at TC=+25°C and -49A at TC=+100°C. The device utilizes a PowerDI5060-8/SWP package with a thermal resistance (junction-to-case) of 1.6°C/W. Electrical characteristics include a gate threshold voltage ranging from -1V to -3V and total gate charge of 87nC at VGS=-10V.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Manufactured using low on-resistance technology for high-efficiency power management
Subjected to 100% unclamped inductive switching testing during production

Applications

Reverse polarity protections
BLDC motor controls
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the standard commercial grade part matches the application requirements, as an automotive-compliant variant exists under a separate datasheet designation. Ensure compatibility with the specified PowerDI5060-8/SWP footprint dimensions.

Selection Notes

Select this component when designing circuits requiring robust performance in elevated thermal conditions. The low on-resistance supports efficient current handling, while the fast switching speed aids in minimizing dynamic losses. Verify that the required gate drive voltage aligns with the specified thresholds for optimal conduction characteristics.

Part Context

This component belongs to Diodes Incorporated's generation of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It is housed in a lead-free, RoHS-compliant PowerDI5060-8 package utilizing a green molding compound. The device is intended for applications demanding reliable operation under high thermal stress.