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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 40V 11.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.8W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMPH4015SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and an SO-8 surface-mount package. The device provides a maximum on-resistance of 11mΩ at VGS=-10V and 15mΩ at VGS=-4.5V, supporting continuous drain currents of -11.4A at +25°C. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Rated for operation in high ambient temperature environments up to +175°C.
- Qualified to JEDEC standards for high reliability and tested for unclamped inductive switching.
Applications
- DC-DC converters
- Power management functions
- Analog switches
Procurement Notes
Verify the component against the official datasheet DS38003 Rev. 3 to confirm specifications. Ensure the SO-8 package matches design requirements. Confirm compliance with RoHS directives and check for any specific automotive-grade variants if required. Validate thermal performance parameters for the intended application environment.
Selection Notes
Select this component for designs requiring low on-resistance and robust thermal handling in compact surface-mount layouts. Consider the -40V rating and SO-8 footprint when evaluating circuit constraints. Verify gate drive voltages align with the specified thresholds for optimal conduction characteristics.
Part Context
This part belongs to the DMPH4015SSS series from Diodes Incorporated. It is classified as a new generation MOSFET designed to balance low on-resistance with superior switching performance. The product line targets efficiency improvements in modern power electronics systems.
Replacement Considerations
The automotive-compliant variant DMPH4015SSSQ is available under a separate datasheet. Verify pinout compatibility and electrical ratings before substituting with other P-channel MOSFETs in the same voltage class.
