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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 40V 11.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.8W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMPH4015SSSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications, qualified to AEC-Q101 standards. It features a -40V drain-source voltage and low on-resistance of 11mΩ at VGS=-10V and 15mΩ at VGS=-4.5V. The device supports a continuous drain current of -11.4A at +25°C and operates up to +175°C junction temperature. Packaged in an SO-8 case with a tape and reel quantity of 2,500 units.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability in automotive environments
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC converters
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the SO-8 package dimensions match the required PCB footprint layout. Ensure compliance with J-STD-020 moisture sensitivity level 1 requirements during storage and handling procedures.
Selection Notes
Select this component when designing circuits requiring robust performance in high ambient temperature environments. The low input capacitance and fast switching characteristics make it suitable for efficient power management applications. Verify gate drive voltage compatibility with the specified threshold and on-resistance conditions.
Part Context
This part belongs to Diodes Incorporated's automotive-grade discrete semiconductor portfolio. It utilizes silicon technology within a molded plastic SO-8 case. The product line emphasizes high reliability through PPAP capability and strict adherence to automotive quality standards for critical electronic systems.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package type, and qualification standards.
