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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：90.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：4.6W (Ta), 143W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMPH4016SPSW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of -40 V and a continuous drain current (I_D) of -90.7 A at +25°C case temperature. The device exhibits a maximum on-resistance (R_DS(ON)) of 10 mΩ at V_GS = -10 V and 14 mΩ at V_GS = -4.5 V. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Wettable flank design facilitates improved optical inspections
- 100% unclamped inductive switching (UIS) tested in production
- Lead-free finish with RoHS compliance
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packing configuration. Confirm that the component meets all applicable RoHS directives and halogen-free requirements as defined by the manufacturer's quality standards before finalizing procurement specifications.
Selection Notes
Select this component when high-efficiency power management requires low on-state resistance combined with superior switching performance. Ensure the application environment supports the specified +175°C thermal rating and that the gate drive voltages align with the threshold characteristics for optimal conduction.
Part Context
This part belongs to the DMPH series of P-channel MOSFETs designed for high ambient temperature environments. It utilizes the PowerDI5060-8/SWP surface-mount package, which provides enhanced thermal dissipation capabilities compared to traditional packages while maintaining a compact footprint suitable for dense PCB layouts.
Replacement Considerations
Consult official documentation for verified substitutes. Cross-referencing should strictly match the -40V rating, -90.7A current capacity, and PowerDI5060-8 package dimensions to ensure functional compatibility.
