DMPH4016SPSWQ-13

$0.39

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:079c483223ff Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：90.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4.6W (Ta), 143W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMPH4016SPSWQ-13

Overview

The DMPH4016SPSWQ is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage and operating up to +175°C junction temperature. It features a maximum on-resistance of 10mΩ at VGS=-10V and 14mΩ at VGS=-4.5V, with continuous drain currents of -90.7A at TC=+25°C and -64.3A at TC=+100°C. The device utilizes a PowerDI5060-8/SWP package with wettable flanks, supports 100% UIS testing, and meets AEC-Q101 automotive qualification standards.

Feature Summary

Rated for high ambient temperature environments with operation up to +175°C
Features wettable flank terminals to facilitate improved optical inspections
Manufactured in IATF 16949 certified facilities with PPAP capability

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the application environment requires the specified thermal rating and that the PCB layout accommodates the exposed drain pad for optimal heat dissipation. Ensure compliance with RoHS and halogen-free requirements if mandated by the design specifications.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low on-resistance characteristics support efficient power management, while the integrated body diode and fast switching speeds are suitable for high-frequency applications. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically designed to meet stringent industry standards. It is qualified under AEC-Q101 and manufactured in facilities certified to IATF 16949. The product line emphasizes reliability and quality control for critical automotive electronic systems.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Cross-referencing should strictly adhere to manufacturer guidelines regarding pinout compatibility, electrical ratings, and package dimensions.