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Product Detailed Parameters
- Description：MOSFET P-CH 40V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.7A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1918 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMPH4025SFVWQ-13 is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage and up to -40A continuous drain current at +25°C case temperature. It features a maximum on-resistance of 25mΩ at VGS=-10V and 45mΩ at VGS=-4.5V. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 60W at TC=+25°C. Packaged in PowerDI3333-8/SWP (Type UX), it supports automotive qualification standards.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Low on-resistance minimizes conduction losses
- Compact thermally efficient package reduces board area by 33% compared to SO-8
- Qualified to AEC-Q101 with PPAP capability for automotive applications
Applications
- Reverse-polarity protections
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel carrier configuration. Confirm that the required packaging type aligns with automated assembly equipment specifications. Ensure compliance with RoHS 3 and halogen-free requirements if mandated by the end product design. Validate that the PowerDI3333-8/SWP footprint matches the intended PCB layout constraints.
Selection Notes
Select this component when high-density packaging and elevated thermal performance are critical. The small form factor allows for significant board space savings compared to traditional SO-8 packages. Consider the low gate charge and fast switching characteristics for efficient DC-DC converter designs. Verify that the -40V rating meets the system's maximum voltage requirements under all operating conditions.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent reliability standards. It utilizes silicon technology housed in a lead-free, green molding compound package. The device is manufactured in IATF16949 certified facilities, ensuring consistent quality for automotive supply chains requiring specific change control protocols.
Replacement Considerations
DMPH4025SFVWQ-7 is an equivalent part number from the same manufacturer offering identical electrical characteristics but packaged in a 2000-unit tape and reel carrier.
