DMPH4026SFVW-13

$0.23

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e032aa3939fa Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2064 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMPH4026SFVW-13

Overview

The DMPH4026SFVW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of -52A at case temperatures of +25°C, with an on-state resistance (RDS(ON)) of 25mΩ at VGS = -10V and -3A. Packaged in a PowerDI3333-8 (SWP) Type UX format, it supports surface-mount assembly.

Feature Summary

Rated for operation up to +175°C junction temperature
Low on-state resistance for minimal power loss
Small form factor package enabling higher density designs
100% unclamped inductive switching tested

Applications

Reverse-polarity protections
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the PowerDI3333-8 (SWP) Type UX package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified thermal resistance values under your intended operating conditions.

Selection Notes

Select this component when high-efficiency power management requires low conduction losses in compact layouts. The wide operating temperature range makes it suitable for high ambient environments. Verify that the gate drive voltage levels are compatible with the threshold characteristics for optimal switching performance.

Part Context

This part belongs to Diodes Incorporated's generation of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It utilizes the PowerDI® 3333-8 package, which occupies significantly less board area compared to traditional SO-8 packages, facilitating smaller end-product designs.