DMPH4026SFVW-7

$0.24

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1a61d67bab3d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2064 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMPH4026SFVW-7

Overview

The DMPH4026SFVW-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of -40V and a maximum continuous drain current (ID) of -52A at TC = +25°C. The device offers a low on-state resistance (RDS(ON)) of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. It supports an operating temperature range from -55°C to +175°C and includes 100% UIS testing.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
Low RDS(ON) ensures minimal on-state power losses during conduction
PowerDI3333-8 package occupies only 33% of the board area compared to SO-8 packages
Manufactured with totally lead-free, RoHS compliant, halogen-free, and antimony-free materials

Applications

Reverse-polarity protection circuits
High-efficiency power-management functions
DC-DC converter topologies

Procurement Notes

Verify the specific ordering suffix when purchasing. The '-7' suffix indicates a tape and reel packing quantity of 2000 units. Confirm that the required component matches this packaging format rather than the '-13' variant, which contains 3000 units per reel. Ensure the design accommodates the PowerDI3333-8 footprint and thermal requirements specified in the datasheet.

Selection Notes

Select this component for applications requiring robust performance in elevated temperature conditions up to +175°C. The small form factor allows for higher density designs compared to traditional SO-8 packages. Evaluate the thermal resistance characteristics based on the specific PCB copper layout and mounting conditions to ensure adequate heat dissipation for the intended load currents.

Part Context

This part belongs to Diodes Incorporated's new generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It utilizes silicon technology within a molded plastic PowerDI® 3333-8 package. The device is manufactured with matte tin annealed terminals over a copper leadframe, ensuring solderability per MIL-STD-208 standards.

Replacement Considerations

An automotive-compliant version of this component is available under the separate part number DMPH4026SFVWQ. Verify if AEC-Q101 qualification is required for the target application before selecting this standard industrial grade part or its automotive counterpart.