DMPH4029LFG-13

$0.22

Description：MOSFET P-CH 40V 8A/22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d63b01d7a8e0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 8A/22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：29mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1626 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMPH4029LFG-13

Overview

The DMPH4029LFG-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI3333-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 29mΩ at VGS=-10V and 45mΩ at VGS=-4.5V, with continuous drain currents of -8.0A at TA=+25°C and -22A at TC=+25°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Low on-state resistance minimizes power losses during conduction
Small form factor thermally efficient package enables higher density end products
Occupies significantly less board area compared to traditional SO-8 packages

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify that the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 3000 units per manufacturer specifications. Confirm compliance with RoHS directives and ensure the component meets AEC-Q101 standards if automotive-grade reliability is required for the target application environment.

Selection Notes

Select this component when designing systems requiring a compact P-channel MOSFET capable of handling high temperatures. Evaluate thermal performance based on the specified junction-to-ambient resistance values under different mounting conditions. Ensure gate drive voltages align with the threshold requirements for optimal on-resistance performance.

Part Context

This part belongs to the DMPH4029LFG series of single N-channel and P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to provide low on-state resistance while maintaining superior switching performance. The series is designed specifically for high-efficiency power management applications where space constraints and thermal efficiency are critical design factors.