ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 40V 8A/22A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1626 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMPH4029LFGQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -40 V and a continuous drain current (I_D) of -8.0 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (R_DS(ON)) of 29 mΩ at V_GS = -10 V and 45 mΩ at V_GS = -4.5 V. It operates within a junction temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards for automotive applications.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments
- Manufactured in IATF 16949 certified facilities with PPAP capability for specific automotive change control requirements
- Small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 3000-unit tape and reel packing configuration as specified in the manufacturer's documentation. Confirm compliance with RoHS directives and halogen-free status requirements for your specific assembly processes. Ensure design parameters align with the absolute maximum ratings provided in the official datasheet to prevent device failure.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI3333-8 package offers significant board area reduction compared to traditional SO-8 footprints while maintaining thermal efficiency. Consider the -40V rating and -8A continuous current limits to ensure adequate headroom for your specific load conditions and switching frequencies.
Part Context
This part belongs to the DMPH series of automotive-grade power MOSFETs designed by Diodes Incorporated. The series emphasizes high reliability through rigorous testing, including 100% unclamped inductive switching tests during production. These devices are engineered to meet stringent automotive industry standards, providing robust performance in demanding electronic environments.
Replacement Considerations
Consult the official Diodes Incorporated cross-reference documentation or contact the manufacturer directly for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical specifications without confirming pinout compatibility and package dimensions.
