DMPH4029LFGQ-7

$0.88

Description：MOSFET P-CH 40V 8A/22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f66959ff3549 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 8A/22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：29mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1626 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMPH4029LFGQ-7

Overview

The DMPH4029LFGQ-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -40 V and a continuous drain current (I_D) of -8.0 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (R_DS(ON)) of 29 mΩ at V_GS = -10 V and 45 mΩ at V_GS = -4.5 V. It operates within a junction temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards.

Feature Summary

Rated for operation up to +175°C, making it suitable for high ambient temperature environments.
Manufactured with a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages.
Subjected to 100% unclamped inductive switching testing during production to ensure reliability.

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm RoHS compliance status and halogen-free definitions as outlined in manufacturer quality product definitions. Ensure the component meets IATF 16949 manufacturing facility requirements if automotive change control protocols are necessary for the intended application.

Selection Notes

Select this component when designing circuits requiring a compact P-channel MOSFET capable of handling -40 V and -8 A under steady-state conditions. Consider its low R_DS(ON) characteristics for minimizing conduction losses. Evaluate thermal resistance values based on the specific PCB copper layout and substrate thickness used in the design.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent industry requirements. It is PPAP capable and manufactured in certified facilities. The device utilizes silicon technology and is specifically engineered to support applications demanding robust performance in high-temperature environments.

Replacement Considerations

Consult official cross-reference lists or datasheets for verified substitutes. Ensure any replacement matches the -40 V rating, P-channel configuration, and PowerDI3333-8 footprint. Verify that alternative components meet equivalent AEC-Q101 qualification and thermal specifications.