DMPH6050SFG-7

$0.22

Description：MOSFET BVDSS: 41V-60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0cdb746a9cfe Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V-60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.1A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1293 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

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DMPH6050SFG-7

Overview

The DMPH6050SFGQ-7 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 50mΩ at VGS=-10V and 70mΩ at VGS=-4.5V, supporting continuous drain currents up to -18A at case temperatures of +25°C. Packaged in a PowerDI3333-8 footprint, it offers high thermal efficiency with a junction-to-case thermal resistance of 6°C/W.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested for reliability
PowerDI3333-8 package reduces board area compared to SO-8

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against your required packing quantity, as these determine the carrier type and unit count per reel. Confirm that the component meets RoHS, Halogen-free, and Antimony-free requirements if mandated by your design specifications. Ensure the selected variant aligns with your manufacturing equipment's tape-and-reel handling capabilities.

Selection Notes

Select this component when an automotive-grade P-channel MOSFET is required for high ambient temperature environments. The low on-resistance minimizes conduction losses, while the compact PowerDI3333-8 package facilitates space-constrained designs. Verify that the gate drive voltage supports the specified RDS(ON) thresholds for optimal performance in your target application.

Part Context

This part belongs to the DMPH series of automotive-qualified MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic PowerDI®3333-8 package with matte tin terminals. The device is designed to meet stringent automotive reliability standards, including PPAP capability and IATF 16949 manufacturing certification.