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Product Detailed Parameters
- Description：MOSFET P-CH 60V 7.2A/23.6A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta), 23.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1377 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMPH6050SK3Q is a P-channel enhancement mode MOSFET rated for -60V drain-source voltage and operating up to +175°C junction temperature. It features a maximum on-resistance of 50mΩ at VGS=-10V and 70mΩ at VGS=-4.5V, with continuous drain currents of -23.6A at TC=+25°C and -19A at TC=+70°C. The device supports pulsed drain currents up to -40A and avalanche energy ratings of 31mJ. Packaged in a TO252 (DPAK) housing, it is AEC-Q101 qualified and PPAP capable.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Guaranteed 100% unclamped inductive switching capability for robust end applications
- Low gate charge and low on-resistance characteristics minimize switching and conduction losses
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets automotive quality standards including AEC-Q101 qualification and PPAP requirements when sourcing from authorized channels.
Selection Notes
Select this component for designs requiring high thermal stability and automotive reliability. Ensure the application circuit accommodates the specified gate threshold voltage range and accounts for the thermal resistance values provided for both steady-state and mounted conditions on FR-4 substrates.
Part Context
Manufactured by Diodes Incorporated, this part belongs to their automotive-grade power semiconductor portfolio. It is produced in IATF 16949 certified facilities and utilizes a 'Green' molding compound that is halogen and antimony free, complying with RoHS directives.
Replacement Considerations
Consult official substitution lists or contact the manufacturer directly for verified equivalent parts. Do not assume functional compatibility with other P-channel MOSFETs without verifying pinout, electrical limits, and package dimensions.
