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Product Detailed Parameters
- Description：MOSFET 2P-CH 26A POWERDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：26A (Tc)
- Rds On (Max) @ Id, Vgs：48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1525pF @ 30V
- Power - Max：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMPH6050SPD-13 is a dual P-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a -60V drain-source voltage and a maximum continuous drain current of -26A at case temperature of +25°C. The on-resistance is rated at 48mΩ max at VGS=-10V and 60mΩ max at VGS=-4.5V. Total gate charge is 14.5nC at VGS=-4.5V and 30.6nC at VGS=-10V. Operating junction temperature ranges from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
- Features 100% unclamped inductive switching testing for robust end-application reliability.
- Designed with low RDS(ON) to minimize power losses and low Qg to reduce switching losses.
- Qualified to AEC-Q101 standards for automotive-grade high reliability.
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the standard DMPH6050SPD datasheet aligns with your quality requirements, noting that an automotive-compliant variant (DMPH6050SPDQ) exists under a separate document. Ensure component authenticity through authorized distribution channels.
Selection Notes
Select this component for applications requiring dual P-channel control within a compact PowerDI footprint. Evaluate thermal management needs based on the 100°C/W junction-to-ambient resistance on FR-4 boards. Consider the -60V rating and -26A current capacity against peak load demands. Verify gate drive voltages match the specified thresholds for optimal RDS(ON) performance.
Part Context
This device belongs to Diodes Incorporated's DMPH series of dual P-channel MOSFETs. It utilizes the PowerDI5060-8 (Type C) surface-mount package, which provides enhanced thermal dissipation compared to traditional SOIC packages. The component is designed to replace discrete solutions or older generation MOSFETs in space-constrained power management designs.
Replacement Considerations
The DMPH6050SPDQ is the automotive-compliant version of this part number. Verify pinout compatibility if substituting with other dual P-channel MOSFETs in the same package family.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
Is this component qualified for automotive applications?
Yes, it is qualified to AEC-Q101 standards. An automotive-compliant part is also available under the separate DMPH6050SPDQ datasheet.
What is the package type?
The component is housed in a PowerDI5060-8 (Type C) surface-mount package.
