DMPH6051SFVWQ-13

$0.17

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c161b9a9f317 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2087 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMPH6051SFVWQ-13

Overview

The DMPH6051SFVWQ is a P-channel enhancement mode MOSFET rated for -60V drain-source voltage and operating up to +175°C junction temperature. It features a maximum on-resistance of 60mΩ at VGS=-10V and 80mΩ at VGS=-4.5V, with continuous drain currents of -20.6A at +25°C and -14.6A at +100°C. The device utilizes a PowerDI3333-8 package and includes wettable flank terminals for enhanced optical inspection.

Feature Summary

Rated for high ambient temperatures with operation up to +175°C
Features wettable flank terminals to improve optical inspection reliability
Qualified to AEC-Q101 standards with PPAP capability for automotive use

Applications

Motor controls
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMPH6051SFVWQ-7 (2000 units per reel) and DMPH6051SFVWQ-13 (3000 units per reel). Confirm that the required quantity matches the available packing options before finalizing procurement orders.

Selection Notes

Select this component for applications requiring robust thermal performance in high-temperature environments. The low on-resistance minimizes conduction losses, while the AEC-Q101 qualification ensures suitability for automotive systems. Ensure gate drive voltages align with the specified thresholds for optimal switching efficiency.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities and is designed to meet stringent automotive requirements. The device is halogen-free, antimony-free, and fully RoHS compliant.