DMPH6051SSDQ-13

$0.31

Description：IC
Series：-

SKU:7e5d3e598bf9 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
Rds On (Max) @ Id, Vgs：60mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2079pF @ 30V
Power - Max：1.7W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DMPH6051SSDQ-13

Overview

The DMPH6051SSDQ-13 is a dual P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source voltage and operates up to +175°C junction temperature. The device is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities. Key electrical parameters include a maximum on-resistance of 60mΩ at VGS = -10V and a continuous drain current of -4.1A at TA = +25°C. It utilizes an SO-8 surface mount package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
100% Unclamped Inductive Switch (UIS) tested in production
Low input capacitance and low on-resistance for fast switching speed

Applications

DC-DC converters
Motor control circuits

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration, as standard tape and reel quantities are specified by the manufacturer. Confirm that the component meets all necessary automotive quality certifications, including AEC-Q101 qualification and PPAP requirements, before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring dual P-channel MOSFETs with high thermal stability and automotive reliability. Ensure the gate drive voltage supports the specified on-resistance thresholds. Verify that the SO-8 package dimensions align with the target PCB layout constraints and thermal management strategy.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is specifically engineered to meet stringent industry standards for reliability and performance in harsh environments. The manufacturing process adheres to strict quality controls to ensure consistency across production batches.