DMPH6051SSSQ-13

$0.20

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ea55ff027d5b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2079 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMPH6051SSSQ-13

Overview

The DMPH6051SSSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of -60V and a maximum continuous drain current of -4.4A at +25°C. The device offers a low on-resistance of 60mΩ at VGS = -10V and 80mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +175°C, supports a total power dissipation of 2.1W, and utilizes an SO-8 surface-mount package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low on-resistance and input capacitance for efficient switching
Fast switching speed characteristics
Manufactured in IATF 16949 certified facilities

Applications

Backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental specifications, including RoHS compliance and Halogen-free status, before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a -60V rated P-channel MOSFET suitable for automotive environments. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Verify thermal management requirements against the junction-to-ambient thermal resistance values provided in the datasheet.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-compliant discrete semiconductors. It is manufactured in facilities certified under IATF 16949 standards. The product line emphasizes reliability and strict change control protocols necessary for original equipment manufacturer integration in vehicle electronics.