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Product Detailed Parameters
- Description：MOSFET P-CH 60V 2.4A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：155mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：512 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：920mW
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMPH6250S-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of -2.4A at +25°C, with an on-resistance of 155mΩ at VGS = -10V. Packaged in a SOT-23 surface-mount format, it utilizes a 3000-unit tape and reel carrier.
Feature Summary
- Designed for high-efficiency power-management applications with minimized on-state resistance
- Rated for operation in high ambient temperature environments up to +175°C
- Features low input capacitance and fast switching speed for dynamic performance
- Qualified to JEDEC standards for high reliability
Applications
- Battery charging systems
- DC-DC converters
- Load switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the standard commercial grade meets application requirements, noting that an automotive-compliant variant (DMPH6250SQ) exists under a separate datasheet if AEC-Q qualification is required.
Selection Notes
Select this component for designs requiring a single P-channel switch with a -60V breakdown voltage. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at -10V or -4.5V. Verify thermal management capabilities against the 165°C/W junction-to-ambient resistance for steady-state operations.
Part Context
This part belongs to the DMPH6250S series of P-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-resistance with superior switching performance. The product line includes variants with different packing quantities, such as the 10000-unit reel version.
Replacement Considerations
An automotive-compliant alternative is available as DMPH6250SQ. Verify package compatibility and electrical parameter alignment when substituting other P-channel MOSFETs.
