DMS2085LSD-13

$0.41

Description：MOSFET P-CH 20V 3.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:95529ba492df Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：353 pF @ 15 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMS2085LSD-13

Overview

The DMS2085LSD-13 is a P-channel enhancement mode MOSFET with an integrated Schottky diode, manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and low on-state resistance of 85mΩ at VGS = -10V. The device supports a continuous drain current of -3.3A and includes a Schottky diode rated for 20V reverse voltage with a forward current of 1.0A. Packaged in SO-8, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Integrated Schottky diode provides low forward voltage drop to minimize conduction losses.
Low input capacitance and fast switching speed enhance efficiency in power management applications.
Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration as documented in the manufacturer's datasheet. Confirm that the component meets the required JEDEC standards for high reliability if intended for such environments. Ensure the selected package type aligns with the PCB footprint design specifications.

Selection Notes

Select this component for designs requiring a compact solution combining a P-channel MOSFET and a Schottky diode in a single SO-8 package. Evaluate the thermal resistance characteristics against the expected ambient temperature conditions. Consider the gate threshold voltage requirements to ensure compatibility with the driving circuit logic levels.

Part Context

This part belongs to the DMS series of power MOSFETs from Diodes Incorporated. It is designed to offer superior switching performance while maintaining low on-state resistance. The integration of the Schottky diode allows for simplified circuit layouts in synchronous rectification or freewheeling applications.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other P-channel MOSFETs or dual-component solutions.