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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4310 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：890mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMS3012SFG is a 30V N-channel enhancement mode MOSFET with an integrated Schottky diode, housed in a PowerDI3333-8 package. It features a maximum drain-source voltage of 30V and a continuous drain current of 12A at 25°C. The device exhibits a typical on-resistance of 7.3mΩ at VGS=10V and 10mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.5V typ, total gate charge of 14.7nC at VGS=4.5V, and reverse recovery charge of 4.3nC. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- DIOFET technology monolithically integrates a MOSFET and Schottky diode to minimize conduction and switching losses.
- Low gate capacitance ratio reduces the risk of shoot-through or cross-conduction currents at high frequencies.
- Small form factor thermally efficient package enables higher density end products compared to SO-8.
- Qualified to AEC-Q101 standards for high reliability applications.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated channels. Confirm package integrity and marking codes match DS35441 Rev. 9 specifications. Ensure storage conditions comply with J-STD-020 Level 1 moisture sensitivity requirements prior to soldering. Check for RoHS 3 compliance documentation if required by specific regional regulations.
Selection Notes
Select this component for designs requiring low on-state resistance and reduced body diode switching losses. The integrated Schottky diode lowers reverse recovery charge, improving efficiency in synchronous rectification or freewheeling applications. Consider thermal management constraints given the PowerDI3333-8 package dimensions and thermal resistance values when determining board layout copper area.
Part Context
This part belongs to Diodes Incorporated's DIOFET family, utilizing a patented process to combine MOSFET and Schottky functionalities on a single die. The PowerDI3333-8 package offers a compact footprint, occupying approximately 33% of the board area relative to traditional SO-8 packages, facilitating miniaturization in portable and space-constrained electronic devices.
Replacement Considerations
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART
FAQ
What is the purpose of the integrated Schottky diode in this MOSFET?
The integrated Schottky diode reduces losses due to body diode conduction and lowers reverse recovery charge (Qrr), thereby minimizing body diode switching losses.
How does the DIOFET structure affect high-frequency performance?
It provides a low gate capacitance (Qg/Qgs) ratio, which reduces the risk of shoot-through or cross-conduction currents during high-frequency switching operations.
