DMS3014SFG-7

$0.70

Description：MOSFET N-CH 30V 9.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b0d766936d6c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 9.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：13mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：4310 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMS3014SFG-7

Overview

The DMS3014SFG-7 is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a maximum on-resistance of 13mΩ at VGS=10V and 14mΩ at VGS=4.5V, with continuous drain currents of 9.5A and 9.0A respectively. The device integrates a Schottky diode to minimize conduction losses and switching losses. It is rated for 100% UIS and Rg testing, operates between -55°C and +150°C, and complies with AEC-Q101 standards.

Feature Summary

Monolithic integration of a MOSFET and Schottky diode on a single die to reduce body diode conduction and switching losses.
Low gate capacitance ratio to mitigate shoot-through risks during high-frequency operation.
Small form factor thermally efficient package that occupies significantly less board area compared to traditional SO-8 packages.
Qualified to AEC-Q101 standards for high reliability and fully RoHS compliant.

Applications

Backlighting systems
Power management functions
DC-DC converters

Procurement Notes

Verify component authenticity through authorized channels as the datasheet explicitly states this part is not recommended for new design with no alternate part provided. Confirm specific ordering suffixes (-7 or -13) match required tape and reel quantities. Ensure application constraints align with the stated limitations regarding life support devices and critical safety systems.

Selection Notes

Select this component for designs requiring low conduction losses and compact footprint in power management circuits. Consider the integrated Schottky benefits for applications sensitive to body diode reverse recovery characteristics. Evaluate thermal performance against the specified junction-to-ambient resistance values under expected load conditions.

Part Context

This MOSFET belongs to the DIOFET family utilizing a patented process for monolithic integration. It is designed to balance low on-state resistance with superior switching performance. The product line targets high-efficiency power management solutions where space constraints and thermal efficiency are critical design parameters.

Replacement Considerations

The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and 'NO ALTERNATE PART'. No official substitute part numbers are documented within the provided source material. Designers must evaluate existing inventory usage or redesign around available alternatives independently.

FAQ

Is the DMS3014SFG qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability. An automotive-compliant version (DMS3014SFGQ) is also available under a separate datasheet.