DMS3015SSS-13

$0.60

Description：MOSFET N-CH 30V 11A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c91c0deaf414 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 11A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11.9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.6 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1276 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：1.55W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMS3015SSS-13

Overview

The DMS3015SSS-13 is an N-channel enhancement mode MOSFET with a monolithic Schottky diode, utilizing SiMFET technology. It features a 30V drain-source voltage rating and an 8-pin SO-8 surface-mount package. The device supports a continuous drain current of 11A at 25°C ambient temperature and handles pulsed currents up to 80A. Key electrical parameters include a maximum on-resistance of 14.9mΩ at VGS=4.5V and 11A, and a gate threshold voltage ranging from 1.0V to 2.5V. Total gate charge is specified at 30.6nC at VGS=10V.

Feature Summary

Integrates a high-density UMOS N-channel MOSFET with a Schottky barrier diode for enhanced conversion efficiency.
Utilizes Diodes Incorporated’s Monolithic SiMFET Technology to minimize on-state resistance while maintaining fast switching speeds.
Qualified to AEC-Q101 standards for high reliability and tested for 100% UIS and Rg performance.

Applications

High-efficiency power management applications
DC-DC converter circuits requiring synchronous rectification
Automotive electronic systems meeting AEC-Q101 requirements

Procurement Notes

Verify the component status before procurement as the datasheet explicitly states this part is not recommended for new design and has no alternate part. Confirm that the specific ordering suffix matches the required tape and reel packaging configuration. Ensure compliance with RoHS and lead-free definitions if environmental regulations apply to the manufacturing process.

Selection Notes

Select this component for designs requiring integrated body diode functionality in an N-channel configuration within an SO-8 footprint. Consider the thermal resistance and power dissipation limits when designing heat sinks or PCB copper areas. Evaluate the gate charge and threshold voltage against the driving circuit capabilities to ensure optimal switching performance.

Part Context

This component belongs to the DMS series of power field-effect transistors manufactured by Diodes Incorporated. It represents a specialized integration of MOSFET and Schottky technologies designed to reduce component count and improve system efficiency in power conversion topologies.

Replacement Considerations

The datasheet explicitly states there is no alternate part available for this component. Designers must verify if existing inventory can be utilized or if a redesign using a different manufacturer's equivalent is necessary.